1 3 2 10.2 0.2 |? 3 . 8 0 . 1 5 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 2.5 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 pin 1 pin 3 case pin 2 positive ct negative ct suffix "a" case pin 2 pin 3 pin 1 pin 1 pin 3 case pin 2 doubler suffix "d" features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. un i t s maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m rectif ied current @t c = 1 30 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r wa r d ( i f = 15 a , t c = 2 5 ) v o l ta g e ( i f = 15 a , t c = 1 2 5 ) ( n ote 1 ) ( i f = 30 a , t c = 2 5 ) maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 m a x i m u m t h e r m a l r e s i s t a n c e (note2) r j c /w operating junction temperature range t j storage temperature range t stg 2. thermal resistance from junction to case. m a 30 35 40 45 50 60 8 0 100 30 1 50 21 2 5 28 32 35 42 56 70 3 0 35 40 4 5 50 60 8 0 100 v o l t a g e r a n g e: 3 0 - 10 0 v curr e n t : 30 a m e t al s i li c on j un c t i on, m a j o r i t y c a r r i er c on d u c t i on. ca s e : j e d e c t o - 2 2 0 a b , m o l ded p l a s t i c body schottky barrier rectifier s h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 0 . 2 1.0 1.5 t o- 220 a b mbr 2 5 3 0 ct ---mbr 2 5 100 ct mbr mbr mbr mbr mbr mbr mbr mbr 2 5 3 0 ct 25 35 ct 25 40 ct 25 45 ct 25 50 ct 25 60 ct 258 0 ct 25 100 ct g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.071ounce, 2.006 grams 40 50 v - 0 . 8 2 0 . 75 0.85 0.65 - - - - single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters (i f =30a,t c =125 ) 0.73 - - diode semiconductor korea www.diode.kr
single phase half wave 60hz resistive or inductive load 0 2 5 5 0 7 5 1 00 1 25 1 50 1 75 1 0 2 0 4 0 3 0 0 .1 500 .4 .5 .9 1.1 10 .6 1.0 .7 .8 pulse width = 300 10 04 0 6 0 20 100 120 140 80 mb r25 30ct-mbr 25 60ct . 1 1.0 . 0 1 mbr 25 80ct-mbr 25 100ct t c =125 ?? t c =25 ?? mbr 25 80ct-mbr 25 100ct mbr 25 30ct-mbr 25 60ct 0 3 0 1 100 150 6 0 9 0 12 0 10 8 . 3 m s s i ng l e h a l f s i n e w a v e t j = 125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s MBR2530CT---mbr25100ct nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes mi lli amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% fi g. 1 -- peak forward surge current instantaneous reverse current, www.diode.kr diode semiconductor korea
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